Fishing – trapping – and vermin destroying
Patent
1994-05-26
1997-07-15
Wilczewski, Mary
Fishing, trapping, and vermin destroying
437401FT, 437101, 437173, 437174, H01L 21336
Patent
active
056482760
ABSTRACT:
A method and an apparatus for fabricating a thin film semiconductor device are disclosed. An a-Si:H thin film produced on a wafer is melting-recrystallized by irradiating a laser beam to it in a laser annealing chamber to produce a polycrystalline Si thin film. The wafer is then transported to a CVD chamber without exposing it to the outside air. A gate insulating film is produced on a clean surface of the polycrystalline Si thin film in the CVD chamber. In another case, an a-Si:H thin film is melting-recrystallized in the laser annealing chamber to produce a polycrystalline Si thin film and then the wafer is transported to a hydrogenating chamber without exposing it to the outside air. Thereafter the polycrystalline Si thin film is plasma hydrogenated in the hydrogenating chamber. The method and apparatus can fabricate thin film semiconductor devices having a high performance and a high reliability with a good uniformity by making a clean and high quality semiconductor/insulator interface or by hydrogenating a semiconductor thin film without changes in electrical conductivity.
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Hara Masaki
Kanaya Yasuhiro
Kohno Atsushi
Sameshima Toshiyuki
Sano Naoki
Sony Corporation
Wilczewski Mary
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