Method and apparatus for fabricating a carbon nanotube...

Details Method and apparatus for fabricating a carbon nanotube... Method and apparatus for fabricating a carbon nanotube...

2008-06-30

2010-12-14

Luu, Chuong A. (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S020000, C257S257000, C257S321000, C257S314000, C257S350000

Reexamination Certificate

active

07851783

ABSTRACT:
A method of fabricating a nanotube field-effect transistor having unipolar characteristics and a small inverse sub-threshold slope includes forming a local gate electrode beneath the nanotube between drain and source electrodes of the transistor and doping portions of the nanotube. In a further embodiment, the method includes forming at least one trench in the gate dielectric (e.g., a back gate dielectric) and back gate adjacent to the local gate electrode. Another aspect of the invention is a nanotube field-effect transistor fabricated using such a method.

REFERENCES:
patent: 6972467 (2005-12-01), Zhang et al.
patent: 7141727 (2006-11-01), Appenzeller et al.
patent: 2006/0011972 (2006-01-01), Graham et al.

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