Nanotechnology – Nanostructure – Devices having flexible or movable element
Reexamination Certificate
2006-11-28
2006-11-28
Dickey, Thomas L. (Department: 2826)
Nanotechnology
Nanostructure
Devices having flexible or movable element
C257S020000
Reexamination Certificate
active
07141727
ABSTRACT:
A method of fabricating a nanotube field-effect transistor having unipolar characteristics and a small inverse sub-threshold slope includes forming a local gate electrode beneath the nanotube between drain and source electrodes of the transistor and doping portions of the nanotube. In a further embodiment, the method includes forming at least one trench in the gate dielectric (e.g., a back gate dielectric) and back gate adjacent to the local gate electrode. Another aspect of the invention is a nanotube field-effect transistor fabricated using such a method.
REFERENCES:
patent: 2003/0178617 (2003-09-01), Appenzeller et al.
patent: 2004/0036128 (2004-02-01), Zhang et al.
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Appenzeller Joerg
Avouris Phaedon
Lin Yu-Ming
Dickey Thomas L.
International Business Machines - Corporation
Patterson & Sheridan L.L.P.
Tong, Esq. Kin-Wah
Tuchman, Esq. Ido
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