Method and apparatus for exposing photoresists using...

Details Method and apparatus for exposing photoresists using... Method and apparatus for exposing photoresists using...

2005-04-12

2005-04-12

Mathews, Alan (Department: 2851)

Photocopying

Projection printing and copying cameras

Step and repeat

C355S067000, C355S077000, C430S312000, C430S313000, C430S394000

Reexamination Certificate

active

06879376

ABSTRACT:
Method and apparatus for exposing photo resists using programmable masks increases imaging resolution to provide fully dense integrated circuit patterns made of very small features on photoresist-coated silicon wafers by optical lithography. Small features are created by means of overlap exposure with either programmable or conventional masks. Blocking photoresists responding differently to two different wavelengths of light, two-color photoresists requiring two wavelengths of light to change solubility, and two-photon photoresists which change solubility only by absorbing two photons at a time may be used.

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M. Fritze, J. Burns, et al., “Sub-100 nm silicon in insulator complementary metal-oxide semiconductor transistors by deep ultraviolet optical lithography, ”J. Vac. Sci. Technol. B. 18(06), Nov./Dec. 2000, pp. 2886-2891.
D. Gelbart, “248nm thermoresist: 0.1 micron imaging without proximity effects,” in Emerging lithographic technologies III, Y. Vladimirsky, ed., Proc, SPIE v.3676, 1999.

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