Method and apparatus for evaluating thin-film multilayer structu

Details Method and apparatus for evaluating thin-film multilayer structu Method and apparatus for evaluating thin-film multilayer structu

1995-05-19

1996-06-25

Wong, Don

X-ray or gamma ray systems or devices

Specific application

Diffraction, reflection, or scattering analysis

378 71, 378 83, G01N 2320

Patent

active

055307329

ABSTRACT:
A method of determining the compositions and thicknesses of metamorphic layers at heterointerfaces of periodic laminated structures, such as multiple quantum well structures. An X-ray diffraction pattern of the actual structure is measured and a theoretical X-ray diffraction pattern is calculated using dynamic X-ray theory and giving special attention to X-ray diffraction fringes near a satellite peak in the pattern. The thicknesses and compositions of the metamorphic layers are adjusted in a recursive analysis until the calculated pattern agrees with the measured pattern, thereby providing an accurate analysis of laminated periodic structures.

REFERENCES:
patent: 5442676 (1995-08-01), Fewster

Affiliated with

Also associated with

Rating

Method and apparatus for evaluating thin-film multilayer structu does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for evaluating thin-film multilayer structu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for evaluating thin-film multilayer structu will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2195622