Method and apparatus for evaluating the capacitance of an integr

Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – With rotor

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324158D, 324 731, 324678, 250310, G01R 1702, G01R 3126

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active

050972049

ABSTRACT:
A method and apparatus for testing an integrated electronic device wherein the integrated electronic device to be tested is placed on a sample table. A predetermined position of the integrated electronic device is irradiated with the primary charged beam. A substrate current flowing through a substrate of the integrated electronic device is measured upon radiation of the primary charged beam, and then a potential of the predetermined position irradiated with the primary charged beam is nondestructively measured in accordance with secondary electrons emitted from the predetermined position. A function of the integrated electronic device is evaluated in accordance with the substrate current and the predetermined position potential. The function to be evaluated includes leakage characteristics and a capacitance.

REFERENCES:
patent: 3995216 (1976-11-01), Yun
patent: 4460866 (1984-07-01), Feuerbaum et al.
patent: 4695794 (1987-09-01), Bargett et al.
patent: 4788495 (1988-11-01), Plies
patent: 4851768 (1989-07-01), Yoshizawa et al.
Feuerbaum; "VLSI Testing Using the Electron Probe"; Scanning Electron Microscopy 1979; pp. 285-296.
Menzel et al.; "Secondary Electron Detection Systems for Quantitative Voltage Measurements"; Scanning vol. 5, 4 (1983).

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