Method and apparatus for evaluating surface and subsurface and s

Optics: measuring and testing – For light transmission or absorption

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356445, G01N 2141, G01N 2500

Patent

active

050429523

ABSTRACT:
A method and apparatus are disclosed for evaluating surface and subsurface features in a semiconductor sample. In operation, a periodic energy source is applied to the surface of the semiconductor sample to generate a periodic electron-hole plasma. This plasma interacts with features in the sample as it diffuses. The plasma affects the index of refraction of the sample and the changing plasma density is monitored using a radiation probe. In the preferred embodiment, the radiation probe measures the plasma induced periodic changes of reflectivity of the surface of the sample to yield information about the sample, such as ion dopant concentrations, residue deposits and defects.

REFERENCES:
patent: 4211488 (1980-07-01), Kleinknecht
patent: 4243327 (1981-01-01), Frosch et al.
patent: 4579463 (1986-04-01), Rosencwaig et al.
Cerdeira et al, "Photoreflectance and Electroreflectance in Silicon", Solid State Communications, vol. 7, pp. 879-882, 1969.
Shay, J. L., "Photoreflectance Line Shape at the Fundamental Edge in Ultrapure Galts", Physical Review B, vol. 2, No. 4 (Aug. 15 1970), pp. 803-807.

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