Method and apparatus for evaluating ion implant dosage levels in

Details Method and apparatus for evaluating ion implant dosage levels in Method and apparatus for evaluating ion implant dosage levels in

1989-12-12

1991-12-24

Rosenberger, Richard A.

Optics: measuring and testing

Of light reflection

356432, G01N 2155

Patent

active

050746693

ABSTRACT:
An apparatus (10) designed to evaluate ion implantation levels in semiconductor samples (42) is disclosed. The device includes an intensity modulated pump laser beam (22) and a probe beam (62) having a different wavelength than the pump beam. The two laser beams are focused on a coincident spot on the surface of the sample. Detectors (80, 96) are provided for measuring the non-modulated reflected power of the pump and probe beams. In addition, the modulated reflected power of the probe beam, that is in phase with the intensity modulated pump beam, is also measured. These three independent measurements are utilized to derive the implant dosage level in the semiconductor sample.

REFERENCES:
patent: 4579463 (1986-04-01), Rosencwaig et al.
patent: 4755049 (1988-07-01), Bomback et al.

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