Method and apparatus for evaluating electrostatic discharge cond

Electricity: measuring and testing – Testing potential in specific environment – Voltage probe

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324452, 340635, 361212, G01R 3102, G01N 2760

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active

055571956

ABSTRACT:
A system evaluates occurrences of low level electrostatic discharge events in a manufacturing or processing environment or the like by encapsulating each of a plurality of a MOSFETs in a corresponding package having conductive first and second groups of leads coupled to the gate and source and/or drain electrodes of the MOSFET, respectively. The encapsulated MOSFET then is moved through the environment, wherein an electrostatic discharge causes current to flow into the first external electrode, stressing the gate oxide of the MOSFET and producing a permanent low resistance condition therein. The encapsulated MOSFET then is removed from the environment and tested by measuring an electrical parameter indicative of the low resistance condition between the first and second electrodes of the MOSFET. A statistical analysis then is performed on the data obtained by testing all of the MOSFETs to determine how to reduce or avoid ESD in the environment.

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patent: 5381105 (1995-01-01), Phipps
patent: 5410254 (1995-04-01), Consiglio
"Novel Test Structure For The Measurement Of Electrostatic Discharge Pulses", by Lendenmann, Schrimpf and Bridges, IEEE Transactions on Semiconductor Manufacturing, vol. 4, No. 3, Aug. 1991, pp. 213-218.
"Zero Introduces Multiple ESD Sensor Sensitivities At Nepcon West", Contact: Jonathan P. Deex, Zero Static Systems News Release, Feb. 25, 1991, 2 pages.
Ratoski IPM Corp. What Happens After it Leaves the Plant May 1991.

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