Method and apparatus for etching of silicon materials

Details Method and apparatus for etching of silicon materials Method and apparatus for etching of silicon materials

1997-03-27

2000-06-20

Bueker, Richard

Etching a substrate: processes

Gas phase etching of substrate

Etching inorganic substrate

216 58, 216 59, 156345, 438706, H01L 2100, C23F 102, B44C 122

Patent

active

060774517

ABSTRACT:
Disclosed is a method and an apparatus for etching a silicon material in order to prepare a sample for measuring the impurities which are contained in the silicon material. The silicon material is etched by contacting the silicon material with an etching gas containing a fluorine compound which is selected from the group consisting of xenon fluoride, hydrogen fluoride, oxygen fluoride and halogen fluoride, to produce a product by reaction of the silicon material with the etching gas. The product is heated to evaporate and remove the product from an impurity which is contained in the silicon material and not reactive to the etching gas.

REFERENCES:
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patent: 4310380 (1982-01-01), Flamm et al.
patent: 4498953 (1985-02-01), Cook et al.
patent: 4749440 (1988-06-01), Blackwood et al.
patent: 5288333 (1994-02-01), Tanaka et al.
patent: 5395482 (1995-03-01), Onda et al.
Ibbotson, D.E. et al, "Plasmaless dry etching of silicon with fluorine-containing compounds", J. Appl. Phys. 56(10) pp. 2939-2942, Nov. 1984.

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