Static information storage and retrieval – Information masking – Diffraction
Patent
1991-11-06
1992-08-11
Clawson, Jr., Joseph E.
Static information storage and retrieval
Information masking
Diffraction
365218, 357 235, G11C 1140
Patent
active
051385767
ABSTRACT:
A method and apparatus for erasing an array of electrically erasable EPROM cells that avoids overerasure and allows programming or erasure of individual cells are provided. An erase line for each column of the array applies erase potential to the erase node of each cell in the column, provided that the erase node is connected to the erase line by a transistor controlled by a row select line. A sense amplifier determines when each cell begins to conduct and disconnects that cell from its erase line. By selecting a particular row, and then applying erase potential only to selected erase lines, a pattern of erased and programmed cells can be created in each row. The pattern differs from row to row depending on which erase lines have erase potential applied when that row is selected. Bias differences between erase and read modes assure that the erased cells, which have gone slightly into depletion, are not in depletion in normal operation.
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Altera Corporation
Clawson Jr. Joseph E.
Ingerman Jeffrey H.
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