Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1995-03-01
1996-07-02
Rosasco, S.
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430322, 430394, G03F 900
Patent
active
055320902
ABSTRACT:
An enhanced method and apparatus for forming openings in a photosensitive layer. Using a standard microlithographic printer such as stepper or scan and step system, an unpatterned photosensitive layer is exposed to a first mask having an opening pattern with dimensions within tight (for a given technology generation) process tolerances. Next, prior to development, the photosensitive layer is exposed to a second mask having a grid of clear spaces, surrounding the opening pattern. The combined exposure to the first and second mask forms a latent image of a reduced dimension opening. By the use of two exposures, with the exposure dose for each designed such that intensity profile is easily controllable in the presence of uncontrollable equipment imperfections and process variations, a reduced dimension opening can be formed in a highly manufacturable process with opening sizes smaller than that achievable through conventional lithographic techniques.
REFERENCES:
patent: 4895780 (1990-01-01), Nissan-Cohen et al.
patent: 5308741 (1994-05-01), Kemp
patent: 5424154 (1995-06-01), Borodovsky
M. Helm, W. Kavanaugh, B. K. Liew, C. Petti, A. Stolmeijer, M. Ben-tzur, J. Bornstein, J. Lilygren, W. Ting, P. Trammel, J. Allan, G. Gray, M. Hartranft, S. Radigan, J. K. Shanmugan, R. Shrivastave, "A Low Cost Processor Compatible, 18.4 um2, 6-T Bulk Cell Technology For High Speed SRAMS," Cypress Semiconductor Corp., pp. 65-66, 1993 Symposium On VLSI Technology Digest of Technical Papers, May 17-19, 1993, The Japan Society of Applied Physics and the IEEE Electron Devices Society.
Intel Corporation
Rosasco S.
LandOfFree
Method and apparatus for enhanced contact and via lithography does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for enhanced contact and via lithography, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for enhanced contact and via lithography will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1505381