Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1998-09-02
2000-04-04
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
156345, 216 38, 216 85, 252 791, 438745, 438 8, H01L 2100
Patent
active
06046111&
ABSTRACT:
A method and apparatus for endpointing mechanical and chemical-mechanical planarization of semiconductor wafers, field emission displays and other microelectronic substrates. In one application in which a microelectronic substrate is planarized against a planarizing medium defined by a planarizing fluid and a polishing pad, one method of endpointing the planarizing process in accordance with the invention includes increasing the viscosity of the planarizing fluid between the substrate and the polishing pad as the substrate becomes substantially planar. The endpointing method continues by detecting a change in drag or frictional force between the substrate and the planarizing medium, and then stopping removal of material from the substrate when the rate that the friction increases between the substrate and the planarizing medium changes from a first rate to a second rate greater than the first rate. To increase the viscosity of the planarizing fluid as the substrate becomes planar, the method may further include adding resistance elements to the planarizing fluid. The resistance elements are typically separate from the abrasive particles in the planarizing medium, and the resistance elements can be selected to cause the viscosity of the planarizing fluid to increase from a first viscosity when the substrate is not substantially planar to a second viscosity when the substrate becomes at least substantially planar.
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Powell William
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