Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With measuring – sensing – detection or process control means
Reexamination Certificate
2002-10-24
2009-06-09
Moore, Karla (Department: 1792)
Adhesive bonding and miscellaneous chemical manufacture
Differential fluid etching apparatus
With measuring, sensing, detection or process control means
C156S345280, C156S345410, C118S7230MW, C315S111210, C315S111510, C315S111710
Reexamination Certificate
active
07544269
ABSTRACT:
A plasma processing system including a plasma chamber (120) having a substrate holder (128) and a monitoring system (130). The monitoring system (130) includes a microwave mirror (140) having a concave surface (142) located opposite the holder (128) and a power source (160) is coupled thereto that produces a microwave signal perpendicular to a wafer plane (129) of the holder (128). A detector (170) is coupled to the mirror (140) and measures a vacuum resonance voltage of the signal within the chamber (120). A control system (180) is provided that measures a first voltage during a vacuum condition and a second voltage during a plasma condition and determines an electron density from a difference between the second voltage and the first voltage. The processing system (110) can include a plurality of monitoring systems (130a, 130b, 130c) having mirrors (140a, 140b, 140c) provided in a spatial array located opposite the substrate holder (128). A method of monitoring electron density in the processing system is provided that includes loading a wafer, setting a frequency of a microwave signal to a resonance frequency, and measuring a first voltage of the signal during a vacuum condition. The method further includes processing the wafer (114), measuring a second voltage of the signal during a plasma condition, and determining an electron density from a difference between the second voltage and the first voltage.
REFERENCES:
patent: 3952246 (1976-04-01), Sprott et al.
patent: 5115167 (1992-05-01), Ootera et al.
patent: 5173641 (1992-12-01), Imahashi et al.
patent: 5196670 (1993-03-01), Mantei
patent: 5234526 (1993-08-01), Chen et al.
patent: 5342472 (1994-08-01), Imahashi et al.
patent: 5691642 (1997-11-01), Dobkin
patent: 5705931 (1998-01-01), Klick
patent: 5759424 (1998-06-01), Imatake et al.
patent: 5810963 (1998-09-01), Tomioka
patent: 5821759 (1998-10-01), Scaman et al.
patent: 6060329 (2000-05-01), Kamata et al.
patent: 6113733 (2000-09-01), Eriguchi et al.
patent: 6184623 (2001-02-01), Sugai et al.
patent: 6339297 (2002-01-01), Sugai et al.
patent: 6472822 (2002-10-01), Chen et al.
patent: 6861844 (2005-03-01), Verdeyen et al.
patent: 2001/0019777 (2001-09-01), Tanaka et al.
patent: 2003/0052085 (2003-03-01), Parsons
patent: 2004/0033385 (2004-02-01), Kaushal et al.
patent: 2005/0130447 (2005-06-01), Takaya et al.
patent: WO 01/06544 (2001-01-01), None
patent: WO 01/37306 (2001-05-01), None
Dhingra Rakesh K
Moore Karla
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Tokyo Electron Limited
LandOfFree
Method and apparatus for electron density measurement does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for electron density measurement, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for electron density measurement will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4081586