Method and apparatus for electron-beam lithography

Details Method and apparatus for electron-beam lithography Method and apparatus for electron-beam lithography

2005-07-13

2008-03-11

Kim, Robert (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492100, C250S492200, C250S492300, C250S3960ML, C250S398000

Reexamination Certificate

active

07342241

ABSTRACT:
The present invention is to provide an electron-beam lithography method and an electron-beam lithography apparatus that can draw patterns with a high precision despite a change in barometric pressure, can ensure a satisfactory throughput, and are inexpensive. In the electron-beam lithography method that uses an electron beam to draw patterns on a sample, a difference between a current measured barometric pressure and a previous measured barometric pressure, and an elapsed time between their barometric pressure-measurement points in time are determined. When the rate of the difference of their barometric pressures with respect to the elapsed time is equal to or larger than a prescribed barometric pressure change rate value, a drawing precision is calibrated.

REFERENCES:
patent: 2002/0085184 (2002-07-01), Amano
patent: 2003/0071231 (2003-04-01), Haraguchi et al.
patent: 07-211612 (1995-08-01), None
patent: 2003-017394 (2003-01-01), None
patent: 2003-124096 (2003-04-01), None

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