Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2007-06-12
2007-06-12
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S013000
Reexamination Certificate
active
11086898
ABSTRACT:
Methods and apparatuses for causing electroluminescence with charge trapping structures are disclosed. Various embodiments relate to methods and apparatuses for causing electroluminescence with charge carriers of one type provided to the charge trapping structure by a forward biased p-n structure or a reverse biased p-n structure.
REFERENCES:
patent: 4686110 (1987-08-01), Endo et al.
patent: 6479839 (2002-11-01), Nikolaev et al.
patent: 6697403 (2004-02-01), Lee et al.
A.T. Fiory et al. “Light Emission from Silicon: Some Perspectives and Applications” Journal of Electronic Materials, vol. 32, No. 10, 2003, pp. 1043-1051.
Ku Shao Hong
Lu Chih Yuan
Wang Tahui
Yeh Chih Chieh
Haynes Beffel & Wolfeld LLP
Macronix International Co. Ltd.
Pham Long
Suzue Kenta
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