Method and apparatus for effecting high-frequency...

Oscillators – Solid state active element oscillator – Significant distributed parameter resonator

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C331S1070SL, C331S115000, C331S10800D

Reexamination Certificate

active

07012475

ABSTRACT:
An apparatus includes a distributed resonant tunneling section with a plurality of inductive portions that are coupled in series with each other between first and second nodes, such that a respective further node is present between each adjacent pair of the inductive portions. The distributed resonant tunneling section also has a plurality of resonant tunneling device portions which are each coupled between a third node and a respective one of the further nodes.

REFERENCES:
patent: 3967210 (1976-06-01), Aumann
patent: 5825240 (1998-10-01), Geis et al.
patent: 5920231 (1999-07-01), Ando
patent: 6303941 (2001-10-01), Xie et al.
patent: 6348887 (2002-02-01), Broekaert
patent: 6509859 (2003-01-01), van der Wagt
patent: 1240 188 (2001-07-01), None
Richard H. Matthews, et al., “A New RTD-FET Logic Family”, Proceedings of the IEEE, vol. 87, No. 4, Apr. 1999, pp. 596-605.
PCT, Notification of Transmittal of the International Search Report or the Declaration, dated May 19, 2005 for International Application No. PCT/US2004/043247, 12 pages.
Erik S. Daniel, “Simulations of Electric Field Domain Suppression in a Superlattice Oscillator Device Using a Distributed Circuit Model,” IEEE Transactions on Electron Devices, vol. 50, No. 12, Dec. 2003, pp. 2434-2444.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method and apparatus for effecting high-frequency... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for effecting high-frequency..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for effecting high-frequency... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3528597

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.