Method and apparatus for editing an integrated circuit

Semiconductor device manufacturing: process – Repair or restoration

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438598, 438599, 438662, 438708, H01L 2100, H01L 2144, H01L 21302

Patent

active

061597538

ABSTRACT:
A method and an apparatus for editing an integrated circuit. In one embodiment, an integrated circuit substrate is placed into a laser chemical vapor deposition (LCVD) tool and a conductive metal film is deposited onto the integrated circuit substrate over an area of interest. The integrated circuit substrate is subsequently placed into a focused ion beam (FIB) tool where an optional FIB cleaning step is performed on the conductive element deposited by the LCVD tool to help ensure that a good electrical contact can be made. The FIB tool is also used to introduce any desired cuts into signal lines of the integrated circuit to complete edits. The FIB is also used to remove passivation over integrated circuit nodes of interest to expose buried metal lines for subsequent coupling to the conductive element deposited with the LCVD tool. The FIB tool is then used to deposit a focused ion beam chemical vapor deposition (FIBCVD) conductive element between the exposed integrated circuit nodes of interest and the conductive element deposited with the LCVD tool. As a result, a new conductive element between the nodes of interest is formed through the conductive elements formed by both the LCVD and FIB tools.

REFERENCES:
patent: 4545111 (1985-10-01), Johnson et al.
patent: 4868068 (1989-09-01), Yamaguchi et al.
patent: 4995002 (1991-02-01), Yamada et al.
patent: 5043297 (1991-08-01), Suzuki et al.
patent: 5196362 (1993-03-01), Suzuki
patent: 5208178 (1993-05-01), Usami
patent: 5233310 (1993-08-01), Inoue
patent: 5429994 (1995-07-01), Ishikawa
patent: 5497034 (1996-03-01), Yamaguchi et al.
patent: 5832595 (1998-11-01), Maruyama et al.
Paul Winer, "IC Failure Analysis, E-Beam Tutorial," International Reliability and Physics Symposium, 1996.
Scott Silverman, "Laser Microchemical Technology Enables Real-Time Editing of First-Run Silicon," Solid State Technology, 1996.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method and apparatus for editing an integrated circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for editing an integrated circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for editing an integrated circuit will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-215866

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.