Method and apparatus for drying semiconductor materials

Details Method and apparatus for drying semiconductor materials Method and apparatus for drying semiconductor materials

1991-02-08

1992-01-28

Bennett, Henry A.

Drying and gas or vapor contact with solids

Apparatus

With means to treat gas or vapor

34 58, 34 59, F26B 508

Patent

active

050833812

ABSTRACT:
In a spin-dryer having a rotor on which semiconductor wafers to be dryed are set, nitrogen gas is released at a low rate to enclose the rotor in a nitrogen gas atmosphere from the arrangement of the semiconductor wafers on the rotor until the start of the spinning of the rotor, and then at a relatively high rate from the start of the spinning of the rotor or from immediately before the start of the spinning, in order to dry the semiconductor wafers without oxidation. The downward flow of air into the rotor is prevented for a prset time period from the start of the spinning of the rotor or from immediately before the start of the spinning. Air is then caused to flow into the rotor after an elapse of the preset time period.

REFERENCES:
patent: 4525938 (1985-07-01), Aigo
patent: 4559718 (1985-12-01), Tadokoro
patent: 4637146 (1987-01-01), Motoki et al.
patent: 4651440 (1987-03-01), Karl
patent: 4724619 (1988-02-01), Poli et al.
patent: 4735000 (1988-04-01), Hayashi et al.

Affiliated with

Also associated with

Rating

Method and apparatus for drying semiconductor materials does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for drying semiconductor materials, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for drying semiconductor materials will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1852969