Method and apparatus for doping semiconductors

Details Method and apparatus for doping semiconductors Method and apparatus for doping semiconductors

2006-02-21

2006-02-21

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S016000, C117S026000, C117S047000

Reexamination Certificate

active

07001455

ABSTRACT:
Semiconductor materials such as silicon particles are doped by mixing the semiconductor material with a solution having a dopan and a solvent. The solvent is removed from the wetted surface of the particles of the semiconductor material, thereby yielding particles that are substantially free from the solvent and are uniformly coated with the dopant.

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