Method and apparatus for dielectric etching during...

Details Method and apparatus for dielectric etching during... Method and apparatus for dielectric etching during...

2006-01-04

2009-06-23

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S714000, C438S737000, C257SE21218

Reexamination Certificate

active

07550390

ABSTRACT:
A method for multi-step dielectric etching includes discharge steps between each of the etching steps in order to help release accumulated charge on the wafer produced by the previous etching step. The discharge steps stabilize the plasma discharge in each transition between etching steps. Charge elimination occurs because the negative species is relatively higher at the beginning of plasma spiking and can reach the wafer surface to reduce the accumulated charge.

REFERENCES:
patent: 6399511 (2002-06-01), Tang et al.
patent: 2002/0096116 (2002-07-01), Tamura et al.
patent: 2003/0024643 (2003-02-01), Abatchev et al.
patent: 2005/0287814 (2005-12-01), Lee et al.

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