Method and apparatus for device simulation

Details Method and apparatus for device simulation Method and apparatus for device simulation

1995-06-02

1997-05-06

Teska, Kevin J.

Boots, shoes, and leggings

364580, G06F 1711

Patent

active

056277725

ABSTRACT:
In a method and apparatus for device simulation, a correct impact ionization coefficient is calculated from a distribution function by solving Boltzmann transport equation, impact ionization coefficients are calculated by using all candidates of methods of calculating impact ionization coefficients, one of the candidates of methods of calculation capable of providing impact ionization coefficient which can best approximate the correct impact ionization coefficient obtained from the distribution function by solving Boltzmann transport equation is selected, and thereafter, impact ionization coefficients are calculated by using the selected method.

REFERENCES:
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patent: 4553317 (1985-11-01), Sakaki et al.
patent: 5457337 (1995-10-01), Baron et al.
"Monte Carlo Study of Impact Ionization Phenomena in Small Geometry MOSFET's", by K. Taniguchi et al., IEEE, Electron Dvices Meeting, 1994, pp. 14.3.1-14.3.4.
"Transient Impact Ionization in Bulk Si", by T. Iizuka and H. Kato, IEEE, Numerical Modeling of Processes and Devices . . . Integrated Circuits, 1994 Workshop, pp. 59-62.
"A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport Silicon", by A. Abramo et al., IEEE Transactions on Electron Devices, vol. 41, No. 9, Sep. 1994, pp. 1646-1654.
"Monte Carlo Simulation of Impact Ionization Processes in Silicon", T. Kunikiyo et al., pp. 19-24, Aug. 1994, Proceedings of the Third International Workshop on Computational Electronics.

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