Method and apparatus for determining two dimensional doping...

Details Method and apparatus for determining two dimensional doping... Method and apparatus for determining two dimensional doping...

2005-05-10

2005-05-10

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

With measuring or testing

C438S018000, C250S370140, C250S306000, C324S071500, C324S719000

Reexamination Certificate

active

06890772

ABSTRACT:
A method of forming a SIMS monitor device for determining a doping profile of a semiconductor device structure including providing a plurality of regularly repeating semiconductor structures including a doping profile to form a monitor device including at least one layer of the regularly repeating semiconductor structures; planarizing the monitor device through a thickness of the regularly repeating semiconductor structures to reveal a target surface overlying the doping profile to form a monitor pattern; and, sputtering the target surface over a sputtering area including the monitor pattern through a thickness thereof while simultaneously detecting and counting over a time interval at least one type of species ejected from the target surface according to a secondary ion mass spectroscopy procedure (SIMS).

REFERENCES:
patent: 5140164 (1992-08-01), Talbot et al.
patent: 5248376 (1993-09-01), Saito
patent: 6172399 (2001-01-01), Lee et al.
patent: 6483594 (2002-11-01), Borden et al.

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