Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit
Patent
1988-08-23
1991-06-18
Nelms, David C.
Radiant energy
Photocells; circuits and apparatus
Photocell controlled circuit
324158D, H01J 4014
Patent
active
050251457
ABSTRACT:
This invention relates to the measurement of the minority carrier diffusion length of a semiconductor sample to evaluate the contaminant impurities which reduce the carrier lifetime.
REFERENCES:
patent: 4333051 (1982-06-01), Goodman
patent: 4393348 (1983-07-01), Goldstein et al.
patent: 4567431 (1986-01-01), Goodman
patent: 4581578 (1986-04-01), Honma et al.
patent: 4598249 (1986-07-01), Goodman et al.
patent: 4656419 (1987-04-01), Garlick
Goodman, "A Method for the Measurement of Short Minority Carrier Diffusion Lengths in Semiconductors", J. Appl. Physics, vol. 33, No. 13, Dec., 1961, p. 2250.
Goodman, "Minority Carrier Diffusion Length in Silicon by Measurement of Steady-State Surface Photovoltage", ASTM Standard, F-139, 1978.
Dmitruk et al., "Investigation of Surface Recombination on Epitaxial GaAs Films", Phys. Stat. Sol. (a) 20, 53, 1973.
Luke and Cheng, "A Chemical/Microwave Technique for the Measurement of Bulk Minority Carrier Lifetime in Silicon Wafers", J. Electrochem. So., Apr. 1988, p. 957.
Moss, "Photovoltaic and Photoconductive Theory Applied to InSb", Journal of Electronics and Control, 1, 126 (1955).
Phillips, "Interpretation of Steady-State Surface Photovoltage Measurements in Epitaxial Semiconductor Layers", Solid State Electronics, vol. 15, 1972, p. 1097.
Choo and Sanderson, "Bulk Trapping Effect on Corner Diffusion Length as Determined by the Surface Photovoltage Method: Theory", Solid State Electronics Perogamon Press, 1970, vol. 13, p. 609.
Goodman, "Silicon Wafer Process Evaluation Using Minority Carrier Diffusion Length Measurement by the SPV Method", RCA Review, vol. 44, June 1983, p. 326.
Verkuil, "A Simple, Low Cost, Non-Contact Method of Measuring Bulk Minority Carrier Diffusion Lengths", The Electrochemical Society, Extended Abstracts from Spring Meeting, May 1980, Abstract No. 193.
Saritas et al., "Diffusion Length Studies in Silicon by the Surface Photovoltage Method", Solid State Electronics, vol. 31, No. 5, pp. 835-842, 1988.
Chu and Stokes, "A Composition of Corner Lifetime Measurements by Photo-Conductive Decay and Surface Photovoltage Methods", J. Appl. Phys., vol. 49, May 1978, p. 2996.
Saritas et al., "Comparison of Minority-Carrier Diffusion Length Measurements in Silicon by the Photoconductive Decay and Surface Photovoltage Methods", J. App. Physics, vol. 63, No. 9, May 1988.
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