Method and apparatus for determining the doping profile in epita

Details Method and apparatus for determining the doping profile in epita Method and apparatus for determining the doping profile in epita

1981-09-02

1984-06-26

Tokar, Michael J.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

324 715, 324158R, G01R 104

Patent

active

044568797

ABSTRACT:
An apparatus and method for determining the doping profile of an epitaxial layer of a semiconductor as a function of conductivity (or resistivity) vs. distance (depth) includes modifying a d.c. generated current by a focused laser beam modulated at high frequencies in the order of 20 MHz, and directed in sequence on a point-by-point basis to the layer surface. Photocurrent variations from point-to-point effected by the laser beam striking the layer at each of the sequence of points are detected to provide a signal related to conductivity, (or, if desired, resistivity) of the layer material.

REFERENCES:
patent: 3518545 (1970-06-01), Copeland
patent: 3745454 (1973-07-01), Nikirk et al.
patent: 4180784 (1979-12-01), Nelson et al.
patent: 4205265 (1980-05-01), Staebler
Modern Microelectronics, by Max Fogiel, Research and Education Association, New York, N.Y., 1972, pp. 376-379; 412-413.

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