Method and apparatus for determining a process model that...

Computer-aided design and analysis of circuits and semiconductor – Design of semiconductor mask or reticle – Manufacturing optimizations

Reexamination Certificate

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Reexamination Certificate

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07934176

ABSTRACT:
An embodiment provides systems and techniques for determining a process model. During operation, the system may receive a first optical model which models a first optical system of a photolithography process. Next, the system may use the first optical model to determine a second optical model that models a second latent image that is formed by the first optical system at a second distance. The system may also use the first optical model to determine a third optical model that models a third latent image that is formed by the first optical system at a third distance. Next, the system may receive process data which is obtained by subjecting a test layout to the photolithography process. The system may then determine a process model using the first optical model, the second optical model, the third optical model, the test layout, and the process data.

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Chang-Nam Ahn, et al., “A Novel Approximate Model for Resist Process”, Semiconductor Research Div., Hyundai Electronics Industries Co., Ltd., XP 008001839, SPIE vol. 3334, pp. 752-763, 1998.

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