Method and apparatus for detecting heavy metals in silicon wafer

Details Method and apparatus for detecting heavy metals in silicon wafer Method and apparatus for detecting heavy metals in silicon wafer

1998-09-24

2000-10-31

Snay, Jeffrey

Chemistry: analytical and immunological testing

Silicon containing

436 73, 436 80, 436172, 436177, 422 8208, G01N 2164

Patent

active

061401315

ABSTRACT:
The present invention is to provide a method and apparatus for detecting heavy metals within the bulk of a silicon wafer with high sensitivity. An electric field is applied to a surface of the silicon wafer in order to aggregate heavy metals existing within the bulk of the silicon wafer to the surface of the wafer or the vicinity thereof, and the heavy metals aggregated to the surface of the wafer or the vicinity of the surface are analyzed. The application of an electric field is performed through corona-discharge treatment of the surface of the wafer, or through application of voltage to the surface of the wafer via a contact or non-contact electrode. Alternatively, an x-ray beam is radiated onto the surface of the silicon wafer in order to aggregate heavy metals existing within the bulk of the silicon wafer to the surface of the wafer or the vicinity thereof, and the heavy metals aggregated to the surface of the wafer or the vicinity thereof are analyzed. The method and apparatus for detecting heavy metals are simple and do not require a pre-treatment such as heat treatment which would cause secondary contamination.

REFERENCES:
patent: 3632438 (1972-01-01), Carlson et al.
patent: 4912528 (1990-03-01), Hwang et al.
patent: 5943552 (1999-08-01), Koveshnikov et al.
Railkar, T.A. "Detection of Metal Induced Gap States in Silicon" Appl. Phys. Lett. vol. 66, No. 8, Feb. 20, 1995, pp. 974-975.

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