Method and apparatus for detecting defects on a wafer

Details Method and apparatus for detecting defects on a wafer Method and apparatus for detecting defects on a wafer

2003-12-30

2008-12-16

Bella, Matthew C (Department: 2624)

Image analysis

Applications

Manufacturing or product inspection

C382S273000

Reexamination Certificate

active

07466853

ABSTRACT:
A light is irradiated on a wafer including a plurality of pixels. Image information corresponding to each pixel is measured by sensing the light reflected by the wafer surface. A raw datum is calculated by subtracting the image information of a corresponding pixel from the image information of a target pixel. The target pixel is a subject pixel for detecting a defect. The corresponding pixel is a pixel located in a first device unit and corresponds to the target pixel. The first device unit is located adjacent to a second device unit that includes the target pixel. The threshold region is preset to have at least one pair of upper and lower limits. The target pixel is marked as a defective pixel when the raw datum thereof is included in the threshold region. Accordingly, the killer defect can be detected separate from the non-killer defects that are usually detected together with the killer defects.

REFERENCES:
patent: 2349012 (1944-05-01), Spaeth
patent: 6087673 (2000-07-01), Shishido et al.
patent: 6091846 (2000-07-01), Lin et al.
patent: 6175417 (2001-01-01), Do et al.
patent: 6498867 (2002-12-01), Potucek et al.
patent: 6980686 (2005-12-01), Kuwabara
patent: 7116816 (2006-10-01), Tanaka et al.
patent: 7142708 (2006-11-01), Sakai et al.
patent: 7171038 (2007-01-01), Adler et al.
patent: 7269280 (2007-09-01), Hiroi et al.
patent: 7274813 (2007-09-01), Maeda et al.
patent: 2003/0007677 (2003-01-01), Hiroi et al.
patent: 2001-133418 (2001-05-01), None
Nagaswami et al., Application of Segmented Auto Threshold (SAT) for 0.5um and 0.35um Logic Interconnect Layers, Sep. 10-12, 1997, Advanced Semiconductor Manufacturing Conference and Workshop, 1997, IEEE/SEMI, pp. 126-135.
English language abstract of Japanese Publication. No. 2001-133418.

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