Method and apparatus for detecting defects in wafers

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

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324750, 324754, 324765, G01R 31305, G01R 3102

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active

060912499

ABSTRACT:
A method for detecting electrical defects in a semiconductor wafer, includes the steps of: a) applying charge to the wafer such that electrically isolated structures are raised to a voltage relative to electrically grounded structures; b) obtaining voltage contrast data for at least a portion of the wafer containing such structures using an electron beam; and c) analyzing the voltage contrast data to detect structures at voltages different from predetermined voltages for such structures. Voltage contrast data can take one of a number of forms. In a simple form, data for a number of positions on a line scan of an electron beam can be taken and displayed or stored as a series of voltage levels and scan positions. Alternatively, the data from a series of scans can be displayed as a voltage contrast image. Analysis can be achieved by comparison of one set of voltage contrast data, for example voltage contrast data from one die on a wafer, with one or more other such sets, for example voltage contrast data for corresponding structures on one or more preceding dice, so as to determine differences therebetween.

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Thomas R. Cass, Use of the Voltage Contrast Effect for the Automatic Detection of Electrical Defects on In-Process Wafers, SEMSpec Advanced Wafer Inspection, KLA Instruments Corporation, Santa Clara, Calif. (date unavailable).

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