Method and apparatus for deriving total lateral diffusion in met

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364488, G06F 1750

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056489200

ABSTRACT:
A method and apparatus for deriving total lateral diffusion in MOS transistors includes deriving (40) a DC model. The DC model is then verified (42) with a multifinger transistor. The gate of the multifinger transistor is then isolated (44). Voltage pulses are then applied (46) to the multifinger transistor, and the current attributable to the voltage pulses is measured (48). Using the model, estimates of the total lateral diffusion are adjusted (50) until the modelled current matches the measured current. Finally, the complete and accurate AC/DC model can be used (52) by circuit designers to design various circuits that will operate as designed when implemented.

REFERENCES:
patent: 5410490 (1995-04-01), Yastrow
patent: 5461572 (1995-10-01), Ichikawa
"Spice Modeling for Small Geometry MOSFET Circuits," Ping Yang, Member, IEEE, and Pallab K. Chatterjee, Member, IEEE, IEEE Transactions On Computer-Aided Design of Integrated Circuits and Systems, vol. CAD-1, No. 4, Oct. 1982.
"A Novel Method to Determine Gate-Drain Overlap in Sub-Micron Transistors," C. Duvvury, J.L. Wise, C.F. Machala, and P. Yang, Texas Instruments Incorporated Semiconductor Process and Design Center, Dallas, Texas, presented at IEDM, Dec. 1993.
F.E. DeLaMoneda, H.N. Kotecha, and M. Shatskes, "Measurements of MOSFET Constants," IEEE Electron Device Letters, vol. EDL-3, 1982.
S.E. Laux, "Accuracy of Effective Channel/External Resistance Extraction Algorithm for MOSFET's," IEEE Tran. on electron Devices, vol. ED-31, 1984.
G. Hu, C. Chang and Y. Chia "Gate-Voltage Dependent Effective Channel Length and Series Resistance of LDD MOSFET's," IEEE Tran. on Electron Devices, vol. ED-34, No. 12, Dec. 1987.
K. Terada and H. Muta, "A New Method to Determine MOSFET Channel Length," Japn. J. Appl. Phys., vol. 18, p. 935, 1979.
B.J. Sheu, P.K. Kos, "A Capacitance Method to Determine Channel Lengths for Conventional and LDD MOSFETs," IEEE Electron Device Letters, vol. EDL-5, No. 11, Nov. 1984, p. 491.

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