Coating processes – Direct application of electrical – magnetic – wave – or... – Electrostatic charge – field – or force utilized
Patent
1994-06-21
1996-07-09
Beck, Shrive
Coating processes
Direct application of electrical, magnetic, wave, or...
Electrostatic charge, field, or force utilized
427180, 427475, 427486, 427421, 427 10, 118688, 356 38, 356243, 377 10, B05D 112
Patent
active
055343090
ABSTRACT:
A method of providing particle deposition on a semiconductor wafer or other surface first provides a flow of clean gas into a deposition chamber that purges the chamber prior to introduction of the wafer, and after introduction, continues the flow of clean gas. An aerosol is mixed into the clean gas flow for a desired length of time, so that as the combined flow passes through the deposition chamber particles are deposited on the wafer supported in the chamber. After the deposition has continued for either a desired particle count or a length of time, the flow of aerosol is discontinued, and a clean gas flow sheath is provided over the wafer as it is removed from the chamber. The apparatus carries out this method by providing a source of a clean gas, valves for controlling aerosol introduction into the clean gas, and a support for the wafer in the path of gas introduced into the chamber.
REFERENCES:
patent: 5194297 (1993-03-01), Scheer et al.
patent: 5306345 (1994-04-01), Pellet et al.
Journal of the IES, vol. 35, No. 6, Nov./Dec. 1992, S. Chae et al., "Size Response Characteristics of a Wafer Surface Scanner for Nonideal, Real-World Particles", pp. 45-52.
Aerosol Science and Technology, vol. 6, Jun. 1987, B. Y. H. Liu et al, "Particle Deposition on Semicondcutor Wafers", pp. 215 to 224.
Aerosol Scient and Technology, "Experimental Study of Particle Deposition on Semiconductor Wafers", 12:795-804, 1990 (month unknown).
J. Colloid Interface Sci, "A submicron Aerosol Standard and the Primary, Absolute Calibration of the Condensation Nuclei Counter", 47:155-171, 1974. [month unknown].
Beck Shrive
Meeks Timothy W.
MSP Corporation
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