Method and apparatus for depositing material

Coating processes – Coating by vapor – gas – or smoke – Carbon or carbide coating

Reexamination Certificate

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C427S069000, C427S070000, C427S256000

Reexamination Certificate

active

07744957

ABSTRACT:
A method of depositing organic material is provided. A carrier gas carrying an organic material is ejected from a nozzle at a flow velocity that is at least 10% of the thermal velocity of the carrier gas, such that the organic material is deposited onto a substrate. In some embodiments, the dynamic pressure in a region between the nozzle and the substrate surrounding the carrier gas is at least 1 Torr, and more preferably 10 Torr, during the ejection. In some embodiments, a guard flow is provided around the carrier gas. In some embodiments, the background pressure is at least about 10e-3 Torr, more preferably about 0.1 Torr, more preferably about 1 Torr, more preferably about 10 Torr, more preferably about 100 Torr, and most preferably about 760 Torr. A device is also provided. The device includes a nozzle, which further includes a nozzle tube having a first exhaust aperture and a first gas inlet; and a jacket surrounding the nozzle tube, the jacket having a second exhaust aperture and a second gas inlet. The second exhaust aperture completely surrounds the first tube aperture. A carrier gas source and an organic source vessel may be connected to the first gas inlet. A guard flow gas source may be connected to the second gas inlet. The device may include an array of such nozzles.

REFERENCES:
patent: 4325986 (1982-04-01), Baron et al.
patent: 4788082 (1988-11-01), Schmitt
patent: 4869936 (1989-09-01), Moskowitz et al.
patent: 5256205 (1993-10-01), Schmitt, III et al.
patent: 5356673 (1994-10-01), Schmitt et al.
patent: 5650197 (1997-07-01), Halpern
patent: 5707745 (1998-01-01), Forrest et al.
patent: 5709906 (1998-01-01), Bickford et al.
patent: 5720821 (1998-02-01), Halpern
patent: 5759634 (1998-06-01), Zang
patent: 6048630 (2000-04-01), Burrows et al.
patent: 6066357 (2000-05-01), Tang et al.
patent: 6165554 (2000-12-01), Halpern et al.
patent: 6214631 (2001-04-01), Burrows et al.
patent: 6337102 (2002-01-01), Forrest et al.
patent: 6468605 (2002-10-01), Shah et al.
patent: 6596443 (2003-07-01), Weaver et al.
patent: 6716656 (2004-04-01), Shtein et al.
patent: 0 173 715 (1992-04-01), None
patent: 2 336 553 (1999-10-01), None
patent: WO 01/61071 (2001-08-01), None
patent: WO 02/087787 (2002-11-01), None
patent: WO 03/020999 (2003-03-01), None
patent: WO 03/020999 (2003-03-01), None
Kirk-Othmer. “Vacuum Technology”. Encyclopedia of Chemical Technology. 4th Edition. vol. 24. 1997. pp. 750-753.
Sitckney et al. “Angular Distribution of Flow from Orifices and Tubes at High Knudsen Numbers” A Journal of Vacuum Science and Tecnology, 1967. vol. 4. p. 10-17.
Shtein et al., “Micropatterning of small molecular weight organic semiconductor thin films using organic vapor phase deposition”, J. Appl. Phys., vol. 93, No. 7, pp. 4005-4016, Apr. 1, 2003.
Shtein, et al., “Micron scale patterning of organic thin films via organic vapor phase deposition”, Presentation Outline from the Mat. Res. Soc. Ann. Meeting 2001, Boston.
A.K. Rebrov, “Free Jets in Vacuum technologies”, J. Vac. Sci. Technol., A 19(4), pp. 1679-1687, Jul./Aug. 2001.
J. Fernandez de la Mora, “Surface impact of seeded jets at relatively large background densities”, J. Chem. Phys, 82 (7), pp. 3453-3464, Apr. 1, 1985.
J. Fernandez de la Mora et al., “Aerodynamic focusing of heavy molecules in seeded supersonic jets”, J. Chem. Phys, 91 (4), pp. 2603-2615, Aug. 15, 1989.
A.V. Vasenkov et al., “Flow-field properties under deposition of films from low-density jets”, J. Appl. Phys., 77(9), pp. 4757-4764, May 1, 1995.
A.V. Vasenkov, et al., “Monte Carlo simulation of an amorphous hydrogenated silicon film deposition from a gas jet activated by an electron beam”, Journal of Applied Physics, vol. 83, No. 7, pp. 3926-3928, Apr. 1, 1998.
Karl-Heinz Muller, “Role of Incident Kinetic Energy of Adatoms in Thin Film Growth”, Surface Science vol. 184 (1987) pp. L375-L382.
M. Lebedev et al., “Simple self-selective method of velocity measurement for particles in impact-based deposition”, J. Vac. Sci. Technol., A 18(2), pp. 563-566, Mar./Apr. 2000.
B.L. Halpern et al., “Multiple Jets and moving substrates: Jet Vapor Deposition of multicomponent thin films”, J. Vac. Sci. Technol., A 12 (4), pp. 1623-1627, Jul./Aug. 1994.
D. Lubben, et al., “Growth and doping of Si layers by molecular-jet chemical vapor deposition: Device fabrication”, Appl. Phys. Lett., 71(19), pp. 2812-2814, Nov. 10, 1997.
B.L. Halpern et al., “Gas jet deposition of thin films”, Applied Surface Science 48/49, pp. 19-26, 1991.
D. Eres, “High-speed epitaxy using supersonic molecular jets”, Mat. Res. Soc. Symp. Proc., vol. 201, 1991.
G. Eres, “Application of Supersonic Molecular Jets in Semiconductor Thin Film Growth”, Critical reviews in solid state and materials sciences, vol. 23, Issue 4, pp. 275-322, 1998.
Zhang et al., “Jet Vapor Deposition of Organic Guest-Inorganic Host Thin Films for Optical and Electronic Applications”, Journal of Electronic Materials, vol. 23, No 11, pp. 1239-1244, Nov. 1994.
Shtein et al., “Direct mask-free patterning of molecular organic semiconductors using organic vapor jet printing”, Journal of Applied Physics, vol. 96, No. 8, pp. 4500-4507, Oct. 15, 2004.
ASTM, Compilation of ASTM Standard Definitions, Eighth Edition, p. 380 (1994).
Baldo, et al., “Low pressure organic vapor phase deposition of small molecular weight organic light emitting device structures”,Appl. Phys. Lett. 71(21), pp. 3033-3035 (Nov. 24, 1997).
Baldo, et al., “Organic Vapor Phase Deposition”,Adv. Mater. 10, No. 18, pp. 1505-1514 (1998.
Bird, et al., Transport Phenomena, New York, John Wiley & Sons, Inc., pp. 508-513 (1960).
Burrows, et al., “Organic Vapor Phase Deposition: a new method for the growth of organic thin films with large optical non-linearities”,J. Cryst. Growth156, pp. 91-98 (1995).
U.S. Appl. No. 10/233,470, filed Sep. 4, 2002, Shtein et al.
Forrest et al., “Intense Second Harmonic Generation and Long-Range Structural Ordering in Thin Films of Organic Salt Grown by Organic Vapor Phase Deposition,” Appl. Phys. Lett., vol. 68, pp. 1326-1328 (1996).
Forrest, “Ultrathin Organic films grown by organic molecular beam deposition and related techniques”,Chem. Rev. vol. 97, No. 6, pp. 1793-1896 (Sep./Oct. 1997).
Krumdieck, “Kinetic Model of Low Pressure Film Deposition From Single Precursor Vapor in a Well-Mixed , Cold-Wall Reactor”, Acta mater. 49, 2001, pp. 583-588.
Olsen, “Vapour-phase Epitaxy of GaInAsP”,GaInAsP Alloy Semiconductors, edited by T. P. Pearsall (Wiley, New York, 1982), pp. 11-41.
Parker, ed., McGraw-Hill Dictionary of Scientific and Technical Terms, Fifth Edition, p. 1516 (1994.
Shtein et al., “Micropatterning of small molecular weight organic semiconductor thin films using organic vapor phase deposition”, J. Appl. Phys., vol. 93, No. 7, pp. 4005-4016, Apr. 1, 2003.
Shtein et al., “Effects of Film Morphology and Gate Dielectric Surface Preparation on the Electrical Characteristics of Organic Vapor Phase Deposited Pentacene Thin-Film Transistors,” Appl. Phys. Lett., vol. 81, pp. 268-270 (2002).
Shtein, et al., “Micron scale patterning of organic thin films via organic vapor phase deposition”, Presentation Outline from the Mat. Res. Soc. Ann. Meeting 2001, Boston.
Shtein, et al., “Material transport regimes and mechanisms for growth of molecular organic thin films using low-pressure organic vapor phase deposition”,J. Appl. Phys. 89:2, pp. 1470-1476 (Jan. 15, 2001).
Stringfellow,Organometallic Vapor-Phase Epitaxy: Theory and Practice, pp. 55-283 (Academic, London, 1989).
Supplementary European Search Report from EP 0 277 0461 dated Jun. 12, 2007.
Vaeth, et al., “Chemical vapor deposition of poly (p-phenylene vinylene) based light emitting diodes with l

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