Method and apparatus for depositing a refractory thin film by ch

Details Method and apparatus for depositing a refractory thin film by ch Method and apparatus for depositing a refractory thin film by ch

1994-07-11

1995-08-22

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118730, 118723ER, C23C 1600

Patent

active

054436478

ABSTRACT:
The present invention provides for a chemical vapor deposition reactor cher which is fitted with a rotatable and vertically movable susceptor/wafer carrier. The susceptor/wafer carrier, which is a large diameter disk, provides the reactor with the capability of varying the plasma-substrate distance. As those skilled in the art will appreciate, such a susceptor allows high deposition rates to be achieved for a given power level because the flux of the reactant can be increased due to the high speed rotation which will decrease boundary layer thickness during growth. The ability to adjust the source-substrate distance gives more flexibility than fixed dimensional systems. Further, it allows damage in the thin films to be minimized by simple adjustments to the susceptor/wafer carrier. Because the damage to the thin films is minimized, it makes pulsed operation practical and therefore, the films may be grown in an atomic layer epitaxy mode to produce films of high quality and uniformity.

REFERENCES:
patent: 4681773 (1987-07-01), Bean
patent: 4891118 (1990-01-01), Ooiwa et al.
patent: 4989542 (1991-02-01), Kamo
patent: 5242530 (1993-09-01), Batey et al.
patent: 5273588 (1993-12-01), Foster et al.
patent: 5342660 (1994-08-01), Cann

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