Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Reexamination Certificate
2011-03-29
2011-03-29
McDonald, Rodney G (Department: 1724)
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
C204S298070, C204S298180, C204S298280, C204S192200
Reexamination Certificate
active
07914654
ABSTRACT:
This application discloses a method and apparatus for manufacturing a magnetoresistive multilayer film having a structure where an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer are laminated on a substrate in this order. A film for the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. A film for an extra layer interposed between the substrate and the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. The film for the antiferromagnetic layer is deposited by sputtering as a gas mixture of argon and another gas of larger atomic number than argon is used.
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Djayaprawira David Djulianto
Nagai Motonobu
Tsunekawa Koji
Anelva Corporation
DLA Piper (LLP) US
McDonald Rodney G
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