Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-05-04
2010-12-14
Fahmy, Wael M (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S233000, C257S431000, C257S466000, C257S184000, C257S292000, C257S187000, C257SE21185, C257SE21189, C257SE21456, C257SE21458, C257S219000, C257S225000, C257S239000
Reexamination Certificate
active
07851798
ABSTRACT:
A method and apparatus for operating an imager pixel that includes the act of applying a relatively small first polarity voltage and a plurality of pulses of a second polarity voltage on the gate of a transfer transistor during a charge integration period.
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Mendis, et al., “CMOS Active Pixel Image Sensor”, IEEE Transactions on Electron Devices, vol. 41, No. 3, Mar. 1994, pp. 452-453.
Nixon et al., “256×256 CMOS Active Pixel Sensor Camera-on-a-Chip”, IEEE Journal of Solid-State Circuits, vol. 31, No. 12, Dec. 1996, pp. 2046-2050.
Armand Marc
Dickstein & Shapiro LLP
Fahmy Wael M
Micro)n Technology, Inc.
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