Method and apparatus for crystal growth

Details Method and apparatus for crystal growth Method and apparatus for crystal growth

2003-10-17

2008-08-05

Kunemund, Robert M. (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

C117S023000, C117S024000, C117S025000, C117S026000, C117S903000, C117S922000

Reexamination Certificate

active

07407550

ABSTRACT:
A method and apparatus for growing a crystalline or poly-crystalline body from a melt is described, wherein the melt is retained by capillary attachment to edge features of a mesa crucible. The boundary profile of the resulting melt surface results in an effect which induces a ribbon grown from the surface of the melt to grow as a flat body. Further, the size of the melt pool is substantially reduced by bringing these edges close to the ribbon, thereby reducing the materials cost and electric power cost associated with the process.

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