Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1988-07-08
1990-06-12
Anderson, Bruce C.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250309, H01J 3708
Patent
active
049335650
ABSTRACT:
The present invention relates to a method and apparatus for correcting defects of an X-ray mask which includes a focused ion beam used to irradiate at least a region having a defective portion of an X-ray mask having a protective film and eliminating the protective film; exposing a circuit pattern having a defective portion located under the region or setting this circuit pattern to the state near the exposure; detecting one of the secondary electrons, secondary ions, reflected electrons, or absorbing current generated from that region and detecting a true defective position. Then positioning the focused ion beam to the true defective position and irradiating the focused ion beam to the defective portion thereby correcting the defect.
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patent: 4696878 (1987-09-01), Shimkunas
patent: 4748327 (1988-05-01), Shimozaki et al.
patent: 4751169 (1988-06-01), Behringer et al.
Aiuchi Susumu
Haraichi Satoshi
Koizumi Mitsuyoshi
Kuniyoshi Shinji
Miyauchi Tateoki
Anderson Bruce C.
Hitachi , Ltd.
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