Method and apparatus for controlling thermal transfer in a cycli

Heat exchange – With retainer for removable article – Including liquid heat exchange medium

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51235, 118730, 118733, 118 50, 165 86, 165185, 2504923, 269 21, 269903, F28F 900

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045358346

ABSTRACT:
Apparatus for providing thermal transfer between a semiconductor wafer and a heat sink or source in a vacuum processing chamber includes a platen against which the wafer is sealed to define a thermal transfer region therebetween. The platen includes a passage for gas flow between the chamber and the thermal transfer region. The apparatus further includes a valve for controllably opening and closing the passage and a controller for closing the valve when the pressure in the chamber reaches a predetermined value. Gas at the predetermined pressure, typically 0.5 to 100 Torr, is trapped in the thermal transfer region and conducts thermal energy between the workpiece and the platen. In a preferred embodiment, a plurality of platens are positioned on a rotating disc in an ion implantation system and a centrifugally operated valve is utilized to close the passage.

REFERENCES:
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patent: 4139051 (1979-02-01), Jones et al.
patent: 4261762 (1981-04-01), King
patent: 4282924 (1981-08-01), Faretra
patent: 4453080 (1984-06-01), Berkowitz
patent: 4457359 (1984-07-01), Holden
patent: 4458746 (1984-07-01), Holden et al.
patent: 4491173 (1985-01-01), Demand
King et al., "Experiments on Gas Cooling of Wafers," Nucl. Instrum. Methods, 189 (1981) pp. 169-173.
Hammer, "Cooling Ion Implantation Target," IBM Technical Disclosure Bulletin, vol. 19, No. 6, Nov. 1976, pp. 2270-2271.
Mack, "Wafer Cooling in Ion Implantation," Ion Implantation: Equipment and Techniques, Proc. Fourth Int. Conf., Sep. 1982, (Springer-Verlag, 1983), pp. 221-233.
Model 80-10 High Current Ion Implantation System Brochure, Varian/Extrion Division, Feb. 1982.

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