Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1983-08-29
1985-04-23
Demers, Arthur P.
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
118 501, 118715, 118722, 118723, 204192R, 204164, 219121PL, 219121PV, 219 7616, 315338, 315344, 427 37, 427 42, 427 47, C23C 1500
Patent
active
045128677
ABSTRACT:
Vapor deposition coating can be performed in apparatus in which a plasma of the coating material is generated from the surface of an electrode. The surface area of the electrode from which the plasma is generated can be selectively adjusted by exposing the plasma generating surface of the electrode to the influence of a magnetic field and adjusting the strength of the magnetic field to spread plasma over the evaporative surface of the electrode to permit more efficient utilization of the electrode. Preferably, the electrode is in the form of a flat metal disc (e.g. titanium) and the magnetic field is generated by a wire coil that substantially encircles or is coaxial to the electrode, with the electrode or an associated element functioning as a core for the coil.
REFERENCES:
patent: 2972695 (1961-02-01), Wroe
patent: 3555347 (1971-01-01), Dickinson
patent: 3719582 (1973-03-01), Hansen et al.
patent: 3783231 (1974-01-01), Sablev et al.
patent: 3793179 (1974-02-01), Sablev et al.
patent: 4048436 (1977-09-01), Hiratake et al.
patent: 4190760 (1980-02-01), Kano et al.
patent: 4194106 (1980-03-01), Rudaz et al.
Andreev Anatoly A.
Romanov Anatoly A.
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