Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1997-02-27
1998-10-20
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 15, 117216, 117217, 117218, 117222, C30B 1520
Patent
active
058241493
ABSTRACT:
An enclosing structure extends into a transition zone of a crystal growing system through which the growing crystal is pulled. One or more independent temperature control devices are secured to the inside surface of the enclosing structure, which control devices sense crystal temperature and supply to, or extract heat from, the crystal so that a carefully-controlled thermal gradient can be established either radially or longitudinally in the crystal. The temperature control devices may include temperature sensors that provide temperature information to a central control device connected to each temperature control device. The enclosing structure may have a hollow wall structure through which a heat exchange fluid, such as water, is passed to extract heat from the transition chamber and crystal. The temperature control apparatus may also be segmented so that each segment can be controlled independently of the remaining segments thereby permitting independent control to be effected at different crystal areas. The temperature control apparatus is supported by a structure attached to the enclosing structure which retains liquids and solid particles that may become detached from the temperature control apparatus during the crystal growth process.
REFERENCES:
patent: 4058429 (1977-11-01), Duncan
patent: 4086424 (1978-04-01), Mellen, Sr.
patent: 5129986 (1992-07-01), Seki et al.
Ferrofluidics Corporation
Garrett Felisa
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