Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2000-04-26
2001-11-06
Powell, William A. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C216S038000, C216S088000, C216S089000, C438S693000, C438S745000
Reexamination Certificate
active
06313038
ABSTRACT:
TECHNICAL FIELD
This invention relates to methods and apparatuses for controlling chemical interactions during planarization of microelectronic substrates, for example, controlling the interactions of a corrosion-inhibiting agent.
BACKGROUND
Mechanical and chemical-mechanical planarization processes (collectively “CMP”) are used in the manufacturing of electronic devices for forming a flat surface on semiconductor wafers, field emission displays and many other microelectronic-device substrate assemblies. CMP processes generally remove material from a substrate assembly to create a highly planar surface at a precise elevation in the layers of material on the substrate assembly.
FIG. 1
schematically illustrates an existing web-format planarizing machine
10
for planarizing a substrate
12
. The planarizing machine
10
has a support table
14
with a top-panel
16
at a workstation where an operative portion “A” of a planarizing pad
40
is positioned. The top-panel
16
is generally a rigid plate to provide a flat, solid surface to which a particular section of the planarizing pad
40
may be secured during planarization.
The planarizing machine
10
also has a plurality of rollers to guide, position and hold the planarizing pad
40
over the top-panel
16
. The rollers include a supply roller
20
, first and second idler rollers
21
a
and
21
b,
first and second guide rollers
22
a
and
22
b,
and take-up roller
23
. The supply roller
20
carries an unused or pre-operative portion of the planarizing pad
40
, and the take-up roller
23
carries a used or post-operative portion of the planarizing pad
40
. Additionally, the first idler roller
21
a
and the first guide roller
22
a
stretch the planarizing pad
40
over the top-panel
16
to hold the planarizing pad
40
stationary during operation. A motor (not shown) drives at least one of the supply roller
20
and the take-up roller
23
to sequentially advance the planarizing pad
40
across the top-panel
16
. Accordingly, clean pre-operative sections of the planarizing pad
40
may be quickly substituted for used sections to provide a consistent surface for planarizing and/or cleaning the substrate
12
.
The web-format planarizing machine
10
also has a carrier assembly
30
that controls and protects the substrate
12
during planarization. The carrier assembly
30
generally has a substrate holder
32
to pick up, hold and release the substrate
12
at appropriate stages of the planarizing process. Several nozzles
33
attached to the substrate holder
32
dispense a planarizing solution
44
onto a planarizing surface
42
of the planarizing pad
40
. The carrier assembly
30
also generally has a support gantry
34
carrying a drive assembly
35
that can translate along the gantry
34
. The drive assembly
35
generally has an actuator
36
, a drive shaft
37
coupled to the actuator
36
, and an arm
38
projecting from the drive shaft
37
. The arm
38
carries the substrate holder
32
via a terminal shaft
39
such that the drive assembly
35
orbits the substrate holder
32
about an axis B—B (as indicated by arrow “R
1
”). The terminal shaft
39
may also rotate the substrate holder
32
about its central axis C—C (as indicated by arrow “R
2
”).
The planarizing pad
40
and the planarizing solution
44
define a planarizing medium that mechanically and/or chemically-mechanically removes material from the surface of the substrate
12
. The planarizing pad
40
used in the web-format planarizing machine
10
is typically a fixed-abrasive planarizing pad in which abrasive particles are fixedly bonded to a suspension material. In fixed-abrasive applications, the planarizing solution is a “clean solution” without abrasive particles because the abrasive particles are fixedly distributed across the planarizing surface
42
of the planarizing pad
40
. In other applications, the planarizing pad
40
may be a non-abrasive pad without abrasive particles. The planarizing solutions
44
used with the non-abrasive planarizing pads are typically CMP slurries with abrasive particles and chemicals to remove material from a substrate.
To planarize the substrate
12
with the planarizing machine
10
, the carrier assembly
30
presses the substrate
12
against the planarizing surface
42
of the planarizing pad
40
in the presence of the planarizing solution
44
. The drive assembly
35
then orbits the substrate holder
32
about the axis B-B and optionally rotates the substrate holder
32
about the axis C—C to translate the substrate
12
across the planarizing surface
42
. As a result, the abrasive particles and/or the chemicals in the planarizing medium remove material from the surface of the substrate
12
.
The CMP processes should consistently and accurately produce a uniformly planar surface on the substrate assembly to enable precise fabrication of circuits and photo-patterns. During the fabrication of transistors, contacts, interconnects and other features, many substrate assemblies develop large “step heights” that create a highly topographic surface across the substrate assembly. Yet, as the density of integrated circuits increases, it is necessary to have a planar substrate surface at several intermediate stages during substrate assembly processing because non-uniform substrate surfaces significantly increase the difficulty of forming sub-micron features. For example, it is difficult to accurately focus photo patterns to within tolerances approaching 0.1 micron on non-uniform substrate surfaces because sub-micron photolithographic equipment generally has a very limited depth of field. Thus, CMP processes are often used to transform a topographical substrate surface into a highly uniform, planar substrate surface.
In some conventional CMP processes, the planarizing pad
40
engages a metal portion of the substrate
12
having a highly topographical surface with high regions and low regions. The planarizing liquid
44
can include solvents or other agents that chemically oxidize and/or etch the metal to increase the removal rate of the metal during planarization. During the planarizing process, the beneficial accelerating effect of the etchant can be reduced because the etchant can act at least as quickly on the low regions of the metal portion as the high regions of the metal portion. Accordingly, the low regions may recede from the high regions and reduce the planarity of the substrate
12
.
One approach addressing this potential drawback is to dispose a corrosion-inhibiting agent in the planarizing liquid
44
to restrict or halt the action of the etchant. This allows the mechanical interaction between the planarizing pad
40
and the substrate
12
to dominate the chemical interaction. Accordingly, the removal rate at the high regions of the microelectronic substrate
12
is generally higher than the low regions because the high regions have more mechanical contact with the planarizing pad
40
than do the low regions. As a result, the height differences between the high regions and the low regions are more quickly reduced. The inhibiting agent, however, can have adverse effects on the overall removal rate and other aspects of the planarizing process.
SUMMARY OF THE INVENTION
The present invention is directed toward methods and apparatuses for planarizing microelectronic substrates. A method in accordance with one aspect of the invention includes engaging the microelectronic substrate with a planarizing medium having a planarizing liquid and a planarizing pad with a planarizing surface, with at least one of the planarizing liquid and the planarizing pad having a selected chemical agent. The method firther includes separating a passivating agent (such as a corrosion-inhibiting agent) from a discrete element (such as an abrasive particle) of the planarizing medium with the selected chemical agent and/or impeding the corrosion-inhibiting agent from coupling to the discrete element of the planarizing medium with the selected chemical agent. The method still further includes moving at least one of the pla
Chopra Dinesh
Meikle Scott G.
Micro)n Technology, Inc.
Perkins Coie LLP
Powell William A.
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