Method and apparatus for controlling charged particle beams in c

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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2504921, H01J 37302

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active

051343002

ABSTRACT:
A charged particle beam exposure system employs a continuously moving stage technique and a double deflection technique. The system stably deflects charged particle beams and reliably exposes a sample to the beams with no overflow. The system positively moves a major deflector from one subfield to a particular position of another subfield on the sample for period corresponding to a settling time that is usually needed for a subfield-to-subfield jump of the major deflector, and then exposes the sample to the beams.

REFERENCES:
patent: 4945246 (1990-07-01), Davis et al.
patent: 4950910 (1990-10-01), Yasuda et al.

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