Method and apparatus for continuous processing of semiconductor

Details Method and apparatus for continuous processing of semiconductor Method and apparatus for continuous processing of semiconductor

1997-07-24

1999-04-13

Valentine, Donald R.

Electrolysis: processes, compositions used therein, and methods

Electrolytic coating

Coating moving substrate

205143, 205157, 205656, 205686, 205687, 204202, 204212, 204224R, 204224M, C25D 712, C25D 900, C25D 1700, C25F 700

Patent

active

058939660

ABSTRACT:
An electrochemical reaction assembly and methods of inducing electrochemical reactions, such as for deposition of materials on semiconductor substrates. The assembly and method achieve a highly uniform thickness and composition of deposition material or uniform etching or polishing on the semiconductor substrates by retaining the semiconductor substrates on a moving cathode immersed in an appropriate reaction solution wherein a wire mesh anode rotates about the moving cathode during electrochemical reaction.

REFERENCES:
patent: 2495695 (1950-01-01), Camin et al.
patent: 3161576 (1964-12-01), Teichner
patent: 3161578 (1964-12-01), Facquet et al.
patent: 3522087 (1970-07-01), Lacal
patent: 3580827 (1971-05-01), Lannegrace
patent: 3714011 (1973-01-01), Grosso et al.
patent: 4304641 (1981-12-01), Grandia et al.
patent: 4592816 (1986-06-01), Emmons et al.
patent: 4696729 (1987-09-01), Santini
patent: 5096550 (1992-03-01), Mayer et al.
patent: 5198089 (1993-03-01), Brueggman
patent: 5273642 (1993-12-01), Crites et al.
patent: 5403458 (1995-04-01), Hartig et al.
patent: 5421987 (1995-06-01), Tzanavaras et al.
patent: 5437777 (1995-08-01), Kishi
patent: 5441629 (1995-08-01), Kosaki
patent: 5447615 (1995-09-01), Ishida
patent: 5472592 (1995-12-01), Lowery
patent: 5516412 (1996-05-01), Andricacos et al.

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