Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Forming a platelet shape or a small diameter – elongate,...
Patent
1989-11-09
1995-04-11
Straub, Gary P.
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
Forming a platelet shape or a small diameter, elongate,...
117 91, 117 98, 117205, 117921, 117952, 423290, 423291, 423344, 423346, 501 87, 501 95, 501 96, 501 97, C30B 2936, C30B 2938, C30B 2962, C30B 3500
Patent
active
054048362
ABSTRACT:
Described herein is a method and apparatus for continuously growing single crystal whiskers of silicon carbide, silicon nitride, boron carbide and boron nitride by the VLS process under controlled reaction conditions. A growth substrate such as a plate of solid graphite is coated with a suitable VLS catalyst and is conveyed through a tubular furnace, into which is separately introduced two feed gases. The first feed gas contains a cationic suboxide precursor such as silicon monoxide or boron monoxide. The second feed gas contains an anionic precursor compound such as methane or ammonia. The precursor compounds react upon exposure to the catalyst by the VLS process to produce crystalline whiskers. The associated apparatus includes a conveyor assembly that continuously circulates multiple substrate growth plates through the furnace and past a harvesting device which brushes the whiskers from the plates and removes them by vacuum collection. Whiskers of uniform size, shape, and purity are produced.
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Eklund William A.
Straub Gary P.
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