Method and apparatus for configuring an epitaxial reactor for re

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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117914, 118725, C30B 2512

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active

056859066

ABSTRACT:
A set (10) of susceptors (12) having essentially equal outer diameters (14) and different depression diameters (20) is used in a horizontal flow semiconductor epitaxial reactor. The susceptors receiving smaller diameter wafers (24) have an increased surface area (84) that preheats the process gases and leads to reduced resistivity variation in the epitaxial layers. The susceptors fit interchangeably onto a susceptor support (32) and into a susceptor ring (38), thereby allowing wafers of different diameters to be processed by changing only the susceptor and not the susceptor support, the susceptor ring, and other associated hardware. Set-up time is greatly reduced, thereby allowing more flexibility in scheduling wafers to be processed and improving reactor utilization. Inventory of reactor components can be reduced because it is no longer necessary to stock susceptor rings and other hardware for wafers of different diameters.

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ASM/Epitaxy, Inc.--Epsilon One--Model E2--Single Wafer Epitaxial Reactor Maintenance Mnaual 11-322923A, Issue 2, pp. 2-13 and 2-14, Nov. 1990.

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