Method and apparatus for coating a semiconductor wafer

Coating processes – Centrifugal force utilized

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118 52, 427348, 427378, 4273855, B05D 312

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active

057052239

ABSTRACT:
These desirable results and other objects of the present invention are realized and provided by depositing coating material on a front surface of a rotating wafer to spread a thin film over this surface while directing a light positive pressure of clean gas over the backside of the spinning wafer to preclude deposits of gas borne particles of the coating material thereon. Solvent application for removal of edge coating can be employed simultaneously with, or subsequent to, the deposit of coating material on the front surface
In the apparatus, the wafer is mounted for rotation over the open end of a containment member terminating at its top in a ring surface to define a central chamber encircled at its top by a narrow radial channel, and the chamber is lightly pressurized from a source of gas, uncontaminated by coating material, to produce a steady flow of clean gas outwardly through said channel into balance at the edge of the wafer with a particle containing gas flow from the front surface to thereby exclude unwanted distributions of coating material or solvent to the wafer.

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patent: 5279926 (1994-01-01), Chandler et al.

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