Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2007-11-13
2007-11-13
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C257SE21499, C083S015000, C225S093000
Reexamination Certificate
active
11072331
ABSTRACT:
A starting point for cleavage made up of at least one of a groove and a through hole is formed on a chip dividing line or a dicing line along the cleaved surface of a wafer. Liquid matter is injected into the starting point. Then, the liquid matter is changed by applying an external factor that changes the liquid matter physically. Making use of the change, the wafer is cleaved so as to divide the wafer into semiconductor chips.
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Notification of Reasons for Rejection in the First Examination issued by the State Intellectual Property Office of the People's Republic of China, dated Jan. 26, 2007, for Chinese Patent Application No. 200510053418.
Kurosawa Tetsuya
Shimizu Noriko
Takyu Shinya
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