Method and apparatus for cleaning of semiconductor substrates us

Cleaning and liquid contact with solids – Processes – Using sequentially applied treating agents

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134 2, 134 6, 134 26, B08B 300

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active

058688633

ABSTRACT:
A cleaning method and apparatus using very dilute hydrofluoric acid (HF) for cleaning silicon wafers and semiconductor substrates. The HF is delivered to the core of a brush where the solution is absorbed by the brush and then applied by the brush onto the substrate. This delivery system applies the chemical solutions uniformly to the semiconductor substrate and reduces the volumes of chemical solutions used in a scrubbing process. The process of the present invention uses very dilute HF and allows a thin oxide to be etched but not completely removed so as to maintain a hydrophilic surface state. Thus, this invention presents a chemical mechanical cleaning process with in-situ etching with the use of PVA brushes on a brush scrubber. Very accurate control of etch rate is obtained and, therefore, makes this process suitable to multiple cleaning applications of silicon wafers and semiconductor substrates.

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Eitoku, Post-CMP Cleaning Technology, Simicon Korea 95, pp. 29-36, Jan. 1995.
CA vol. 127, No. 102571v: Cristenson, Particle Removal in Solutions of Dilute HF, Semiconductor Pure Water Chemical Conference, 1996, 15th, pp. 289-300, 1997.

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