Drying and gas or vapor contact with solids – Process – By centrifugal force
Reexamination Certificate
2005-05-17
2005-05-17
Esquivel, Denise L. (Department: 3749)
Drying and gas or vapor contact with solids
Process
By centrifugal force
C034S058000, C034S560000, C134S902000
Reexamination Certificate
active
06892472
ABSTRACT:
A method and apparatus for rinsing and spin-drying a hydrophobic material such as a hydrophobic semiconductor wafer improves wafer drying while at the same time reduces the formation of residual contaminants on the dried surface of the wafer. This is accomplished by first establishing a safe-zone between a minimum rotational speed above which drying proceeds satisfactorily and a maximum rotational speed above which contaminants dry on the wafer's surface. A spin-rate profile can then be adopted such that the rinse/dry process proceeds within the safe zone.
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Esquivel Denise L.
Ingrassia Fisher & Lorenz PC
Novellus Systems Inc.
O'Malley Kathryn S.
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