Method and apparatus for chemical-mechanical polishing of diamon

Details Method and apparatus for chemical-mechanical polishing of diamon Method and apparatus for chemical-mechanical polishing of diamon

1996-12-05

1998-05-05

Breneman, R. Bruce

Etching a substrate: processes

Nongaseous phase etching of substrate

Using film of etchant between a stationary surface and a...

156345, 216 38, 216 53, 216 96, H01L 2100

Patent

active

057469318

ABSTRACT:
This application describes a new method for rapid thinning, planarizing and fine polishing surfaces of diamond to the submicron
anometer level so that large area, uniform thickness diamond wafers can be obtained. The method combines both chemical (dissolution of carbon in molten metals) and mechanical (rotating or moving sample fixtures in contact with the dissolving metals) polishing to achieve flat, smooth surface finishes in a relatively short period of time, thus improving the quality and economics of the overall polishing process. Several embodiments of apparatus for performing such chemical-mechanical polishing (CMP) of diamond are described.

REFERENCES:
patent: 4690727 (1987-09-01), Scott et al.
patent: 5382314 (1995-01-01), Jin
patent: 5500157 (1996-03-01), Graebner et al.
"Reaction of CVD Diamond With Molten Iron Film", Wei et al., Int. Conf. Appl. Diamond Films Relat. Mater., 2nd (1993'), abstract only; Coden: 61 WDAW; Wei et al.
"Preliminary Study of the Chemical Polishing of Alpha-Corundum Surfaces with Vanodium Pentoxide"; Fakton et al.; abstract only; J. Elect. Soc. (1967'); 114 (4).

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